Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
نویسندگان
چکیده
منابع مشابه
Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure.
Ultrafast differential transmission spectroscopy is used to explore temperature-dependent carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Electron-hole pairs are optically injected into the three dimensional GaAs barriers, after which we monitor carrier relaxation into the two dimensional InGaAs quantum wells and the zero dimensional InAs quantum dots by tuning the pr...
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The self-assembled InAs quantum dots (QDs) are the subject of substantial interest during last fifteen years due to both fundamental scientific and application reasons. In these systems, the strong localization of an electronic wave function leads to an atomic-like electronic density of states and permits to realize the novel and improved photonic and electronic devices. Microlectronic and opto...
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In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced sign...
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Three different InAs quantum dots QDs in an InGaAs/GaAs quantum well were formed and investigated by time-resolved and temperature dependent photoluminescence PL . A strong PL signal emitting at 1.3 m can be obtained at room temperature with a full width at half maximum of only 28 meV. Dots-in-a-well structures result in strong stress release and large size InAs QDs which lead to narrowing and ...
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The electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emitting around 1.55 μm are investigated. The carrier dynamics in QDs is studied by non-resonant timeresolved photoluminescence (tr-PL) experiments. This analysis reveals the QD electronic structure and the transient filling of the confined QD levels. Under low excitation densities, the spontaneous exciton lifetime is est...
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ژورنال
عنوان ژورنال: Journal of Luminescence
سال: 2018
ISSN: 0022-2313
DOI: 10.1016/j.jlumin.2018.05.029